Abstract: | Japan's Research and Development (R&D) activities on high‐performance III–V compound space solar cells are presented. Studies of new CuInGaSe2 thin‐film terrestrial solar cells for space applications are also discussed. Performance and radiation characteristics of a newly developed InGaP/GaAs/Ge triple‐junction space solar cell, including radiation response, results of a flight demonstration test of InGaP/GaAs dual‐junction solar cells and CuInGaSe2 thin‐film solar cells, and radiation response of three component sub‐cells are explained. This study confirms superior radiation tolerance of InGaP/GaAs dual‐junction cells and CuInGaSe2 thin‐film cells by space flight experiments. Copyright © 2005 John Wiley & Sons, Ltd. |