Materials and process aspect of cross-point RRAM (invited) |
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| Authors: | Joonmyoung LeeMinseok Jo Dong-jun SeongJungho Shin Hyunsang Hwang |
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| Affiliation: | a School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, South Korea
b Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju, South Korea |
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| Abstract: | A survey of non-volatile and highly scalable cross-point memory in nanoscale resistive switching device is introduced. We present the basic operation of bipolar switching memory using combination between switching layer (HfOx/PCMO) and oxygen reservoir layer (ZrOx/AlOx) and discuss the crucial issue for cross-point ReRAM. Based on the results, the applications of cross-point structure without any selection device were introduced. To evaluate the feasibility of cross-point ReRAM, read-out margin was calculated using PSPICE simulation. In addition, by the device scaling, three phenomena can be confirmed: (1) reset current reduction, (2) local heating effect and (3) significant improvement of uniformity. |
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| Keywords: | ReRAM Cross-point Resistive switching |
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