退火温度对Pb(Zr_(0.53)Ti_(0.47))O_3薄膜结构及其性能的影响

采用sol-gel法在Pt/Ti/SiO_2/Si衬底上制备Pb(Zr_(0.53)Ti_(0.47))O_3薄膜.利用X射线衍射仪(XRD)和原子力显微镜(AFM)对其晶格结构和微观形貌进行了表征,通过改变退火温度制得了具有单一钙钛矿结构的Pb(Zr_(0.53)Ti_(0.47))O_3薄膜.然后将该薄膜与环氧树脂形成复合结构材料.对其铁电性能以及复合材料的阻尼性能进行了测试,结果表明,退火温度的升高有利于改善薄膜的铁电性能,在750℃下退火的Pb(Zr_(0.53)Ti_(0.47))O_3薄膜,其剩余极化值2Pr达到了68.6μC/cm~2, 矫顽场强2E_c达到158.7kV/cm;同时退火温度的升高还有利于薄膜致密度的提高,对复合材料的阻尼性能也有一定的改善,当退火温度达到800℃,复合材料的阻尼损耗因子达到最大值,阻尼温域最宽,阻尼性能最好.

Effect of annealing temperature on the microstructure and properties of Pb(Zr_(0.53)Ti_(0.47))O_3 thin films

Pb(Zr_(0.53)Ti_(0.47))O_3 thin films were fabrcated on Pt/Ti/SiO_2/Si substrates by sol-gel method. The structure and morphology of the thin films were characterized by X-ray diffractometer and atomic force microscopy. The thin films showed a perovskite phase by a change of annealing temperature. And then a composite structure was constructed by the thin films and the epoxy resin. The ferroelectric property of thin films has been improved with rising of annealing temperature. The Pb(Zr_(0.53)Ti_(0.47))O_3 thin films annealed at 750℃ 2Pr value of 68.6μC/cm~2 and 2E_c value of 158.7kV/cm at an applied electric field of 400kV. The density of the thin films has been increased and the damping property of composites has been also improved with the rising of the annealing temperature. When the Pb(Zr_(0.53)Ti_(0.47))O_3 thin films annealed at 800℃, the damping loss factor of the composites has reached the maximum, and the damping temperature range has got the widest.