| 衬底热电子增强的薄SiO2层击穿特性研究 |
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| 引用本文： | 刘红侠,郝跃,黄涛,方建平.衬底热电子增强的薄SiO2层击穿特性研究[J].电子学报,2001,29(11):1468-1470. |
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| 作者姓名： | 刘红侠 郝跃 黄涛 方建平 |
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| 作者单位： | 西安电子科技大学微电子研究所,陕西西安 710071 |
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| 基金项目： | 国防预研基金，8.5.4.3， |
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| 摘 要： | 本文通过衬底热电子SHE(Substrate hot electron)注入技术,对SHE增强的薄SiO2层击穿特性进行了研究.实验发现氧化层中的平均电子能量与衬底电压有很大的关系.通过能量守恒方程计算注入到氧化层中的平均电子能量,根据计算出的电子能量可以解释SHE注入和F-N隧穿注入的根本不同.本文提出了衬底热电子增强的TDDB(Time dependent dielectric breakdown)模型.
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| 关 键 词： | 薄栅氧化层 经时击穿 衬底热电子 击穿电荷 |
| 文章编号： | 0372-2112(2001)11-1468-03 |
| 收稿时间： | 2000-11-20 |
Study of Substrate Hot Electron Enhanced Breakdown Characteristics of Thin SiO2 |
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| LIU Hong-xia,HAO Yue,HUANG Tao,FANG Jian-ping.Study of Substrate Hot Electron Enhanced Breakdown Characteristics of Thin SiO2[J].Acta Electronica Sinica,2001,29(11):1468-1470. |
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| Authors: | LIU Hong-xia HAO Yue HUANG Tao FANG Jian-ping |
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| Affiliation: | Institute of Microelectronics,Xidian University,Xi'an,shanxi 710071,China |
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| Abstract: | SHE (Substrate hot electron) enhanced breakdown characteristics of thin SiO 2 are investigated by using SHE injection techniques.These experiments reveal that the average electron energy in the oxide depends on substrate voltage strongly.The average electron energy injected into oxide can be calculated by using the energy-conservation equation.The difference between SHE injection and F-N tunneling can be explained in terms of the caculated electron energy.A SHE enhanced TDDB model is presented in this paper. |
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| Keywords: | thin gate oxide TDDB SHE charge to breakdown |
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