| Mg注入非极性a面GaN退火温度的研究 |
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| 引用本文： | 杨扬,李培咸,周小伟,贾文博,赵晓云.Mg注入非极性a面GaN退火温度的研究[J].电子科技,2013,26(1):12-15. |
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| 作者姓名： | 杨扬 李培咸 周小伟 贾文博 赵晓云 |
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| 作者单位： | (西安电子科技大学 宽禁带半导体材料与器件教育部重点实验室,陕西 西安 710071) |
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| 摘 要： | 非极性GaN材料解决了传统GaN材料中的极化现象,具有较好的应用前景。用金属有机物化学气相沉积方法,在r面蓝宝石上生长了Mg注入非极性a面GaN 薄膜,并选取650 ℃、750 ℃、850 ℃这3个温度对Mg注入GaN薄膜进行退火温度研究。用原子力显微镜、光致发光谱、拉曼谱研究了材料的表面形貌、光学性质以及面内应力。结果表明,在750 ℃退火时效果较好。
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| 关 键 词： | 非极性 氮化镓 原子力显微镜 光致发光谱 拉曼谱 |
Study of Mg-doped Nonpolar a-plane GaN Films Annealing Temperature |
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| YANG Yang
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LI Peixian
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ZHOU Xiaowei
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JIA Wenbo
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ZHAO Xiaoyun.Study of Mg-doped Nonpolar a-plane GaN Films Annealing Temperature[J].Electronic Science and Technology,2013,26(1):12-15. |
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| Authors: | YANG Yang LI Peixian ZHOU Xiaowei JIA Wenbo ZHAO Xiaoyun |
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| Affiliation: | (Key Lab.of Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education,Xidian University,Xi'an 710071,China) |
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| Abstract: | The nonpolar GaN materials solve the polarization of conventional GaN materials,and thus have a good prospect of application.Mg-dopoed nonpolar a-plane GaN film is grown on r-plane sapphire by metal organic chemical vapor deposition method,and three temperatures of 650 ℃,750 ℃ and 850 ℃ are selected to study the annealing temperature of Mg-doped nonpolar GaN films.With an atomic force microscope (AFM),photoluminescence spectroscopy (PL) and Raman spectra (Raman),the surface morphology of the material,optical properties,and surface stress are studied.Best results are obtained when annealed at 750 ℃. |
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| Keywords: | nonpolar GaN AFM PL Raman |
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