| 拓扑绝缘体薄膜和有限尺寸效应 |
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| 引用本文： | 张翼,何珂,马旭村,薛其坤.拓扑绝缘体薄膜和有限尺寸效应[J].物理,2011,40(7):434-439. |
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| 作者姓名： | 张翼 何珂 马旭村 薛其坤 |
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| 作者单位： | 1. 中国科学院物理研究所表面物理国家重点实验室 北京100190
2. 中国科学院物理研究所表面物理国家重点实验室 北京100190;清华大学物理系 低维量子物理国家重点实验室 北京 100084 |
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| 基金项目： | 国家自然科学基金(批准号:21025314;10974231); 国家重点基础研究发展计划(批准号:2009CB929400)资助项目 |
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| 摘 要： | 拓扑绝缘体是近年来发现的一类新的量子材料,已成为凝聚态物理的研究热点领域.厚度仅几纳米的拓扑绝缘体薄膜不但具有奇特的物理性质,而且还是拓扑绝缘体应用于平面器件的基础.文章以Bi2Se3为例,介绍了Bi2Se3家族拓扑绝缘体薄膜的分子束外延生长以及其能带、自旋结构和拓扑性质随层厚的演化.这些结果为人工调控拓扑绝缘体的电子结构和物理性质提供了指导.
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| 关 键 词： | 拓扑绝缘体 Bi2Se3 分子束外延 角分辨光电子能谱 扫描隧道显微镜 |
Topological insulator thin films and finite size effects |
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| ZHANG Yi,HE Ke,MA Xu-Cun,XUE Qi-Kun.Topological insulator thin films and finite size effects[J].Physics,2011,40(7):434-439. |
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| Authors: | ZHANG Yi HE Ke MA Xu-Cun XUE Qi-Kun |
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| Affiliation: | 1,2 (1 State Key Lab for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190,China) (2 State Key Lab of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084,China) |
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| Abstract: | Topological insulators (TIs) are a new class of quantum matter which have attracted extensive interest recently. Nanometer thick TI thin films not only exhibit novel physical properties but also are useful for developing TI\|based planar devices. Taking Bi2Se3 as an example, we report the molecular beam epitaxy growth of the Bi2Se3 family of TI thin films and the thickness dependent behavior of their band and spin structures and topological characteristics. The results provide information on the artificial ... |
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| Keywords: | topological insulator Bi2Se3 molecular beam epitaxy angle\|resolved photoemission spectroscopy scanning tunneling microscopy |
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