Systematic Study of Widely Applicable N‐Doping Strategy for High‐Performance Solution‐Processed Field‐Effect Transistors |
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Authors: | Jihong Kim Dongyoon Khim Kang‐Jun Baeg Won‐Tae Park Seung‐Hoon Lee Minji Kang Yong‐Young Noh Dong‐Yu Kim |
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Affiliation: | 1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Buk‐gu, Gwangju, Republic of Korea;2. Department of Physics, Imperial College London, London, UK;3. Department of Graphic Arts Information Engineering, Pukyong National University, Nam‐gu, Busan, Republic of Korea;4. Department of Energy and Materials Engineering, Dongguk University, Jung‐gu, Seoul, Republic of Korea |
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Abstract: | A specific design for solution‐processed doping of active semiconducting materials would be a powerful strategy in order to improve device performance in flexible and/or printed electronics. Tetrabutylammonium fluoride and tetrabutylammonium hydroxide contain Lewis base anions, F? and OH?, respectively, which are considered as organic dopants for efficient and cost‐effective n‐doping processes both in n‐type organic and nanocarbon‐based semiconductors, such as poly[[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)] (P(NDI2OD‐T2)) and selectively dispersed semiconducting single‐walled carbon nanotubes by π‐conjugated polymers. The dramatic enhancement of electron transport properties in field‐effect transistors is confirmed by the effective electron transfer from the dopants to the semiconductors as well as controllable onset and threshold voltages, convertible charge‐transport polarity, and simultaneously showing excellent device stabilities under ambient air and bias stress conditions. This simple solution‐processed chemical doping approach could facilitate the understanding of both intrinsic and extrinsic charge transport characteristics in organic semiconductors and nanocarbon‐based materials, and is thus widely applicable for developing high‐performance organic and printed electronics and optoelectronics devices. |
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Keywords: | conjugated polymers n‐doping organic field‐effect transistors semiconducting single‐walled carbon nanotubes |
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