Resistive Switching Memory Integrated with Nanogenerator for Self‐Powered Bioimplantable Devices |
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| Authors: | Bo‐Yun Kim Woong‐Hee Lee Hyun‐Gyu Hwang Dong‐Ha Kim Jeong‐Hun Kim Sang‐Hoon Lee Sahn Nahm |
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| Affiliation: | 1. Nano‐Bio‐Information‐Technology, KU‐KIST Graduate School of Converging Scienceand Technology, Korea University, Seongbuk‐Gu, Seoul, South Korea;2. Department of Materials Science and Engineering, Korea University, Seongbuk‐Gu, Seoul, South Korea;3. Department of Biomedical Engineering, College of Health Science, Korea University, Seoul, South Korea |
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| Abstract: | Resistive random access memory (ReRAM) devices powered by piezoelectric nanogenerators (NGs) have been investigated for their application to future implantable biomedical devices. Biocompatible (Na0.5K0.5)NbO3 (NKN) films that are grown at 300 °C on TiN/SiO2/Si and flexible TiN/Polyimide (TiN‐PI) substrates are used for ReRAM and NGs, respectively. These NKN films have an amorphous phase containing NKN nanocrystals with a size of 5.0 nm. NKN ReRAM devices exhibit typical bipolar switching behavior that can be explained by the formation and rupture of oxygen‐vacancy filaments. They have good ReRAM properties such as a large ratio of RHRS to RLRS as well as high reliability. The NKN film grown on flexible TiN‐PI substrate exhibits a high piezoelectric strain constant of 50 pm V?1. The NKN NG has a large open‐circuit output voltage of 2.0 V and a short‐circuit output current of 40 nA, which are sufficient to drive NKN ReRAM devices. Stable switching properties with a large ON/OFF ratio of 102 are obtained from NKN ReRAM driven by NKN NG. |
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| Keywords: | implantable biomedical applications nanogenerators NKN thin films ReRAMs self‐powered systems |
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