The effect of annealing temperature on the carrier concentration OF Hg0.6Cd0.4Te |
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Authors: | J. L. Schmit E. L. Stelzer |
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Affiliation: | (1) Honeywell Corporate Research Center, 10701 Lyndale Avenue South, 55420 Bloomington, Minnesota |
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Abstract: | The carrier concentration dependence of Hg0.6Cd0.4Te on annealing temperature for the Hg and Te saturation condi-tions is presented in this paper. At low annealing tempera-tures, TA < 350‡ C, residual donor impurities apparently limit the carrier concentration. In contrast, at higher annealing temperatures, 350‡ C < T < 700‡ C, the stoichio-metric acceptor density is increased such that the residual donors are compensated and the material is converted to p-type with an acceptor density as large as 1017 cm−3 . An empirical expression describing this dependence of the acceptors on annealing temperature is given for both the Hg and Te saturation condition: P (Hg saturation) = 1.46 × 1022 exp (−0.84/kTA), P (Te saturation) = 1.90 × 1018 exp (−0.15/kTA). Supported in part by Air Force Materials Laboratory, WPAFB, Ohio under Contract AF61533-C-74-5041. |
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Keywords: | HgCdTe annealing stoichiometric defects carrier concentration. |
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