| 一种高精度低温漂的基准电压源的分析与设计 |
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| 引用本文： | 夏晓娟,谢亮,孙伟锋.一种高精度低温漂的基准电压源的分析与设计[J].固体电子学研究与进展,2008,28(1):124-128. |
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| 作者姓名： | 夏晓娟 谢亮 孙伟锋 |
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| 作者单位： | 东南大学国家专用集成电路系统工程技术研究中心,南京,210096 |
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| 摘 要： | 设计了一种CMOS基准电压源结构,具有高精度、低温漂的特点。它利用带隙基准的基本原理,结合自偏置结构以及适当的启动电路,获得了相对稳定的电压值以及较好的温度系数。此基准结构已经在标准的0.6μmCMOS工艺线上进行了流水,实测结果表明基准电压源的输出中心值为1.209V,温度从0℃变化到100℃,温度系数为66ppm/℃,同时,供电源从2V变化到6V,基准电压值的变化约为2mV。这种基准结构已经成功应用在CMOSDC/DC转换器中,并取得了良好的应用效果。
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| 关 键 词： | 带隙基准 温度系数 自偏置 启动电路 |
| 文章编号： | 1000-3819(2008)01-124-05 |
| 修稿时间： | 2007年5月9日 |
Design of a High-precision Low-temperature-drift Voltage Reference |
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| XIA Xiaojuan,XIE Liang,SUN Weifeng.Design of a High-precision Low-temperature-drift Voltage Reference[J].Research & Progress of Solid State Electronics,2008,28(1):124-128. |
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| Authors: | XIA Xiaojuan XIE Liang SUN Weifeng |
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| Affiliation: | XIA Xiaojuan XIE Liang SUN Weifeng(National ASIC System Engineering Center,Southeast University,Nanjing,210096,CHN) |
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| Abstract: | A high-precision low-temperature-drift CMOS voltage reference is presented in this paper.It uses the traditional principle of bandgap reference together with the self-bias structure and startup circuit to get the stable voltage output and good temperature coefficient.The proposed reference has been fabricated in standard 0.6μm CMOS process.The experiment result manifests that the reference voltage is approximately 1.209 V and the temperature coefficient is 66 ppm/℃.The voltage changes about 2 mV when the supply voltage changes from 2 V to 6 V.Now the voltage reference has been successfully applied in the CMOS DC/DC converters with good performance. |
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| Keywords: | bandgap reference temperature coefficient self-bias startup circuit |
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