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Pressure- and temperature-dependent luminescence from Tm3+ ions doped in GdYTaO4
Authors:Peng-Yu Zhou  Xiu-Ming Dou  Bao-Quan Sun  Ren-Qin Dou  Qing-Li Zhang  Bao Liu  Pu-Geng Hou  Kai-Lin Chi  Kun Ding
Affiliation:1.School of Science, Northeast Electric Power University, Jilin 132012, China;2.State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;3.Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China
Abstract:Luminescent properties of Tm3+-doped GdYTaO4 are studied for exploring their potential applications in temperature and pressure sensing. Two main emission peaks from 3H4 $\to$ 3H6 transition of Tm3+ are investigated. Intensity ratio between the two peaks evolves exponentially with temperature and has a highest sensitivity of 0.014 K-1 at 32 K. The energy difference between the two peaks increases linearly with pressure increasing at a rate of 0.38 meV/GPa. Intensity ratio between the two peaks and their emission lifetimes are also analyzed for discussing the pressure-induced variation of the sample structure. Moreover, Raman spectra recorded under high pressures indicate an isostructural phase transition of GdYTaO4 occurring at 4.46 GPa.
Keywords:rare-earth tantalate  photoluminescence  high pressure  Raman  
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