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Dielectric properties of continuous composition spreaded MgO-Ta2O5 thin films |
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| Authors: | Yun Hoe Kim Jong-Han SongJin Sang Kim Seok-Jin YoonKyung Bong Park Ji-Won Choi |
| Affiliation: | a Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea b Nano Material Analysis Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea c The Center for Green Materials Technology, Andong University, 388, Songcheon-Dong, Andong, Gyeongsangbuk-Do, 760-749, Republic of Korea |
| Abstract: | The dielectric properties of MgO-Ta2O5 continuous composition spread (CCS) thin films were investigated. The MgO-Ta2O5 CCS thin films were deposited on Pt/Ti/SiO2/Si substrates by off-Axis RF magnetron sputtering system, and then the films were annealed at 350 °C with rapid thermal annealing system in vacuum. The dielectric constant and loss of MgO-Ta2O5 CCS thin films were plotted via 1500 micron-step measuring. The specific point of Ta2O5-MgO CCS thin film (post annealed at 350 °C) showing superior dielectric properties of high dielectric constant (k ∼ 28) and low dielectric loss (tan δ < 0⋅004) at 1 MHz were found in the area of 3-5 mm apart from Ta2O5 side on the substrate. The cation's composition of thin film was Mg:Ta = 0.4:2 at%. |
| Keywords: | High-k Thin films Continuous composition spread RF magnetron sputtering |
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