| 光栅调谐外腔半导体激光器特性 |
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| 引用本文： | 李宾中,陈建国.光栅调谐外腔半导体激光器特性[J].半导体光电,1994,15(1):78-80,84. |
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| 作者姓名： | 李宾中 陈建国 |
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| 作者单位： | 四川大学光电系，南充市川北医学院物理教研室 |
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| 摘 要： | 用一端面镀制高效减反射膜的激光二极管（实际已变成超辐射发光二极管），作为外腔中的增益介质与衍射光栅一道构造了光栅调谐外腔半导体激光器，并对其特性进行了分析和实验研究，实现了外腔半导体激光器的宽带调谐单模输出，调谐范围宽达４０ｎｍ，测定了阈值电流和调谐波长的关系。
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| 关 键 词： | 外腔 半导体激光器 调谐 光栅 特性 |
Experimental Study on the Characteristics of the Grating-tuned External Cavity Semiconductor Laser |
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| Li Binzhong,Chen Janguo,Lu Yucun.Experimental Study on the Characteristics of the Grating-tuned External Cavity Semiconductor Laser[J].Semiconductor Optoelectronics,1994,15(1):78-80,84. |
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| Authors: | Li Binzhong Chen Janguo Lu Yucun |
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| Affiliation: | Dept.of Optoelectronic Science and Technology.Sichuan University.Chendu 610064 |
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| Abstract: | A grating-tuned external cavity laser is constructed with a diffraction grating uning a laser diode(LD) with effective antireflection coatings on one of its facet as the gain medium in the external cavity.The tuning characteristics of the external cavity semiconductor lasers have been investigated.Single-mode operation of the device with a tuning range of 40nm has been achieved in experiments.The variations of the threshold current versus the laser wavelength have been measured. |
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| Keywords: | External-cavity Semiconductor Laser Tuning |
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