Pt层对Ni/Si(100)固相反应NiSi薄膜高温稳定性的增强效应

研究了顺次淀积在Si(100)衬底上的Ni/Pt和Pt/Ni的固相硅化反应．研究发现，当1nm Pt作为中间层或覆盖层加入Ni/Si体系中时，延缓了NiSi向NiSi2的转变，相变温度提高．对于这种双层薄膜体系，800℃退火后，XRD测试未检测到NiSi2相存在；850℃退火后的薄膜仍有一些NiSi衍射峰存在．800℃退火后的薄膜呈现较低的电阻率，在23—25μΩ*cm范围．上述薄膜较Ni/Si直接反应生成膜的热稳定性提高了100℃以上．这有利于NiSi薄膜材料在Si基器件制造中的应用．

Enhanced Effects of Pt Layer on Thermal Stability of NiSi Thin Film by Solid Phase Reaction of Ni/Si(100) System

The solid phase silicidation　has　been　studied，which　occurs in the thin films of Ni/Pt and Pt/Ni sputtered sequentially on Si(100) substrate．The results show that the phase transformation from NiSi to NiSi2 is delayed by the　addition of 1nm Pt to the Ni/Si system as a capping- or an　inter-layer,and the phase transformation temperature has　increased．As to the bilayered thin film system,XRD spectra indicate that there exists no NiSi2 phase after annealing at 800℃,but some diffraction peaks corresponding to NiSi after annealing　at　850℃．Annealed at 800℃ the　film　has　a relative low resistance　of　23—25μΩ*cm．Compared with the NiSi film obtained by direct reaction of Ni with Si substrate,the thermal stability of the above-mentioned film is　increased by about 100℃　above，which favors　the application of NiSi in the fabrication　of Si-based devices．