| 基于MOSFET比例差值特性的器件表征方法 |
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| 引用本文： | 王金延,许铭真,谭长华. 基于MOSFET比例差值特性的器件表征方法[J]. 半导体学报, 2001, 22(3) |
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| 作者姓名： | 王金延 许铭真 谭长华 |
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| 作者单位： | 北京大学微电子所, |
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| 摘 要： | 利用比例差值方法给出了MOS器件的一种新特性——比例差值输出特性，该特性具有谱峰特征，其峰位、峰高与器件的特征参数相关．采用了一个分析模型来表征谱峰与器件特性参数关系，可以直接提取MOS器件特征参数．模型计算结果与实验数据保持了很好的一致性．实际测量中不同衬底条件和不同的比例差值常数对提取参数的影响也作了分析．
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| 关 键 词： | MOS器件表征 比例差值 输出特性 |
Characterization Method for Proportional Difference Characteristic of MOSFET Devices |
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| WANG Jin-Yan,XU Ming-zhen,TAN Chang-hua. Characterization Method for Proportional Difference Characteristic of MOSFET Devices[J]. Chinese Journal of Semiconductors, 2001, 22(3) |
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| Authors: | WANG Jin-Yan XU Ming-zhen TAN Chang-hua |
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| Abstract: | A new characteristic,MOSFET-proportional difference output characteristic,is presented,with which the key parameters of MOSFET can be extracted.An analytical model is adopted to characterize the strong dependence of the key parameters on spectral peaks of the proportional difference output characteristic.The theoretical results obtained by this method show a good agreement with the experimental ones.The effect of different substrate biases and different proportional difference constants on the results have also been discussed. |
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