| X射线光刻掩模背面刻蚀过程中的形变仿真 |
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| 引用本文： | 王永坤,余建祖,余雷,陈大鹏. X射线光刻掩模背面刻蚀过程中的形变仿真[J]. 微细加工技术, 2004, 0(3): 19-23,28 |
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| 作者姓名： | 王永坤 余建祖 余雷 陈大鹏 |
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| 作者单位： | 1. 北京航空航天大学,北京,100083
2. 中国科学院微电子中心,北京,100010 |
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| 基金项目： | 国家自然科学基金资助项目(59976004) |
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| 摘 要： | 开发了理论模型以验证有限元方法用于X射线光刻掩模刻蚀过程数值仿真的正确性。利用相同的有限元技术，对X射线光刻掩模的背面开窗、Si片刻蚀过程进行数值仿真。结果表明，图形区域的最大平面内形变(IPD)出现在上、下边缘处，最大非平面形变(OPD)出现在左、右边缘处。此外对Si片单载荷步刻蚀和多载荷步刻蚀的仿真进行比较，结果表明图形区域最终的形变量与Si片刻蚀的过程无关。
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| 关 键 词： | X射线掩模 掩模形变 背面刻蚀 有限元 平面内形变 非平面形变 |
| 文章编号： | 1003-8213(2004)03-0019-05 |
Simulation of X-ray Lithography Mask Distortion during Back-etching |
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| WANG Yong-kun,YU Jian-zu,YU Lei,CHEN Da-peng. Simulation of X-ray Lithography Mask Distortion during Back-etching[J]. Microfabrication Technology, 2004, 0(3): 19-23,28 |
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| Authors: | WANG Yong-kun YU Jian-zu YU Lei CHEN Da-peng |
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| Affiliation: | WANG Yong-kun~1,YU Jian-zu~1,YU Lei~1,CHEN Da-peng~2 |
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| Abstract: | An analytical model is developed to verify the numerical simulation for X-ray lithography mask etching process using finite element (FE). The same FE technique was used for the simulation of backside window-opening process and Si wafer back-etching process. The results indicate that the maximum in-plane distortion (IPD) of the pattern area occurred at the top and bottom edge, and the maximum out-of-plane distortion (OPD) occurred at the left and right edge. In addition, the results were compared between the single load step and multi-load steps for Si wafer etching process, which indicate the resulting distortions of pattern area is independent of the Si wafer etching process. |
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| Keywords: | X-ray mask mask distortion back-etching finite element in-plane distortion out-of-plane distortion |
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