| 渐变In组分InGaN/GaN多量子阱结构中的相分凝及其对提高量子效率的作用研究 |
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| 引用本文： | 郭洪英,孙元平,Yong-Hoon Cho,Eun-Kyung Suh,Hai-Joon Lee,Rak-Jun Choi,Yoon-Bong Hahn.渐变In组分InGaN/GaN多量子阱结构中的相分凝及其对提高量子效率的作用研究[J].半导体学报,2012,33(5):053001-4. |
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| 作者姓名： | 郭洪英 孙元平 Yong-Hoon Cho Eun-Kyung Suh Hai-Joon Lee Rak-Jun Choi Yoon-Bong Hahn |
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| 作者单位： | 烟台大学光电信息科学技术学院,烟台大学光电信息科学技术学院 |
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| 基金项目： | 省自然科学基金;国家自然科学基金;其它 |
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| 摘 要： | 利用光荧光、阴极荧光以及时间分辨荧光光谱技术研究了具有不同In组分的渐变InGaN/GaN多量子阱结构中的相分凝现象。在10 K的荧光光谱中，所有的三个样品中除了主发光峰位外，在其高能及低能位置处还出现了另外两个发光峰，表现出了明显的相分凝现象。三个样品阴极荧光结果中呈现出了明显的强度对比，证明了相分凝现象随着量子阱中In组分的增加而加剧。在15 K的时间分辨荧光光谱中，随着In组分的增加，谱线的上升时间得到了延迟，这表明了载流子在由于相分凝而造成的低、高In组分结构中的输运。
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| 关 键 词： | InGaN 多量子阱 铟含量 相分离 量子效率 图像显示 光致发光 TRPL |
| 修稿时间： | 12/4/2011 4:14:43 PM |
Phase separations in graded-indium content InGaN/GaN multiple quantum wells and its function to high quantum efficiency |
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| Guo Hongying,Sun Yuanping,Yong-Hoon Cho,Eun-Kyung Suh,Hai-Joon Lee,Rak-Jun Choi and Yoon-Bong Hahn.Phase separations in graded-indium content InGaN/GaN multiple quantum wells and its function to high quantum efficiency[J].Chinese Journal of Semiconductors,2012,33(5):053001-4. |
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| Authors: | Guo Hongying Sun Yuanping Yong-Hoon Cho Eun-Kyung Suh Hai-Joon Lee Rak-Jun Choi and Yoon-Bong Hahn |
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| Affiliation: | Institute of Science and Technology for Opto-Electronic Information, Yantai University, Shandong 264005, China;Institute of Science and Technology for Opto-Electronic Information, Yantai University, Shandong 264005, China;Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea;School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea;School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea;School of Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea;School of Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea |
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| Abstract: | Phase separations have been studied for graded-indium content InxGa1-xN/GaN multiple quantum wells (MQWs) with different indium contents by means of photoluminescence (PL), cathodeluminescence (CL) and time-resolved PL (TRPL) techniques. Besides the main emission peaks, all samples show another 2 peaks at the high and low energy parts of the main peaks in PL when excited at 10 K. CL images show a clear contrast for 3 samples, which indicates an increasing phase separation with increasing indium content. TRPL spectra at 15 K of the main emissions show an increasing delay of rising time with indium content, which means a carrier transferring from low indium content structures to high indium content structures. |
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| Keywords: | carrier transfer phase separation graded-indium content multiple quantum wells |
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