Long-wavelength 640×486 GaAs-AlGaAs quantum well infraredphotodetector snap-shot camera |
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| Authors: | Gunapala SD Bundara SV Liu JK Winn Hong Mani Sundaram Maker PD Muller RE Shott CA Carralejo R |
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| Affiliation: | Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA; |
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| Abstract: | A 9-μm cutoff 640×486 snap-shot quantum well infrared photodetector (QWIP) camera has been demonstrated. The performance of this QWIP camera is reported including indoor and outdoor imaging. The noise equivalent differential temperature (NEΔT) of 36 mK has been achieved at 300 K background with f/2 optics. This is in good agreement with expected focal plane array sensitivity due to the practical limitations on charge handling capacity of the multiplexer, read noise, bias voltage, and operating temperature |
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