Teflon/SiO2 bilayer passivation for improving the electrical reliability of pentacene-based organic thin-film transistors |
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| Authors: | Ching-Lin Fan Yu-Zuo Lin Ping-Cheng Chiu Shea-Jue Wang Win-Der Lee |
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| Affiliation: | 1. Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Da’an Dist., Taipei City 106, Taiwan;2. Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Da’an Dist., Taipei City 106, Taiwan;3. Institute of Materials Science and Engineering, National Taipei University of Technology, No. 1, Sec. 3, Chung-Hsiao E. Rd., Da’an Dist., Taipei City 106, Taiwan;4. Department of Electrical Engineering, Lee-Ming Institute of Technology, No. 2-2, Lee-Zhuan Rd., Taishan Dist., New Taipei City 243, Taiwan |
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| Abstract: | We demonstrate a bilayer passivation method using a Teflon and SiO2 combination layer to improve the electrical reliability of pentacene-based organic thin-film transistors (OTFTs). The Teflon was deposited as a buffer layer using a thermal evaporator that exhibited good compatibility with the underlying pentacene channel layer, and can effectively protect the OTFTs from plasma damage during the SiO2 deposition process, resulting in a negligible initial performance drop in OTFTs. Furthermore, because of the excellent moisture barrier ability of SiO2, the OTFTs exhibited good time-dependent electrical performance, even after 168 h of aging in ambient air with 60–80% relative humidity. |
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| Keywords: | Organic thin-film transistor Pentacene Reliability Passivation Teflon |
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