Voltage-readable nonvolatile memory cell with programmable ferroelectric multistates in organic inverter configuration

We demonstrate a voltage-readable nonvolatile memory cell with programmable ferroelectric multistates in an organic inverter configuration. The intermediate memory states of a ferroelectric gate insulator, varying with the magnitude of the programming voltage, allow the multilevels of the drain current at zero gate-source voltage in a ferroelectric organic field-effect transistor (OFET). The current output from the ferroelectric memory is directly converted into the voltage-readable output in a zero-gate load inverter configuration where both a driving paraelectric OFET having a paraelectric buffer layer and a load ferroelectric OFET are monolithically integrated in a single substrate. The multilevel voltage-readable output characteristics are obtained from the ferroelectric multistates as a function of the programming voltage.