The effect of irradiation on the properties of SiC and devices based on this compound

Issues related to the production of radiation defects in silicon carbide of various polytypes and with differing conductivity types and concentrations of charge carriers as a result of irradiation with high-energy particles in a wide range of their energies and masses (from electrons to heavy Bi ions) are considered. The effect of irradiation with high-energy particles on the optical and electrical characteristics of the devices based on SiC are also considered, including the devices that operate as detectors of nuclear radiation. Systematic trends (common to other semiconductors and characteristic of SiC) in the radiation-defect formation in SiC are established. The high radiation resistance of SiC is verified; it is shown that this radiation resistance can be increased at increased energies of incident particles and at higher temperatures of operation.