| N型4H-SiC ECR氢等离子体处理研究 |
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| 引用本文： | 王德君,高明超,朱巧智,秦福文,宋世巍,王晓霞. N型4H-SiC ECR氢等离子体处理研究[J]. 固体电子学研究与进展, 2009, 29(3) |
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| 作者姓名： | 王德君 高明超 朱巧智 秦福文 宋世巍 王晓霞 |
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| 作者单位： | 1. 大连理工大学电子与信息工程学院,辽宁,大连,116024
2. 大连理工大学三束材料改性国家重点实验室,辽宁,大连,116024 |
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| 基金项目： | 国家科技部重大基础研究前期研究专项，辽宁省自然科学基金，教育部新世纪优秀人才支持计划，教育部留学回国人员科研启动基金 |
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| 摘 要： | 采用电子回旋共振(ECR)氢等离子体对n型4H-SiC(0001)表面进行处理,并利用原位高能电子衍射(RHEED)对处理过程进行实时监控。在200°C～700°C温度范围内获得的RHEED图像成条纹状且对比清晰,表明SiC表面原子排列规则,单晶取向性好,计算表明表面未发生重构。用X射线光电子能谱(XPS)技术对表面成分进行分析,结果显示,表面C/C-H污染物被去除、氧含量降低。
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| 关 键 词： | 碳化硅 氢等离子体 电子回旋共振等离子体 反射式高能电子衍射 X射线光电子能谱 |
Study on ECR Hydrogen Plasma Treatment of N-type 4H-SiC |
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| WANG Dejun,GAO Mingchao,ZHU Qiaozhi,QIN Fuwen,SONG Shiwei,WANG Xiaoxia. Study on ECR Hydrogen Plasma Treatment of N-type 4H-SiC[J]. Research & Progress of Solid State Electronics, 2009, 29(3) |
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| Authors: | WANG Dejun GAO Mingchao ZHU Qiaozhi QIN Fuwen SONG Shiwei WANG Xiaoxia |
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| Affiliation: | WANG Dejun1 GAO Mingchao1 ZHU Qiaozhi1 QIN Fuwen2 SONG Shiwei2 WANG Xiaoxia1(1 School of Electronic and Information Engineering,Dalian University of Technology,Dalian,Liaoning,116024,CHN)(2State Key Laboratory of Materials Modification by Laser,Ion and Electron Beams,CHN) |
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| Abstract: | N-type 4H-SiC(0001)surfaces were cleaned by hydrogen plasma with electronic cyclotron resonance(ECR)plasma system,and the whole process was monitored by in-situ reflection high energy electron diffraction(RHEED).RHEED images from 200°C to 700°C showed that the surface atoms were regularly organized and had well orientation of single crystal.The calculation results showed that the surface was not reconstructed.The surface composition was analyzed using X-ray photoelectron spectroscopy(XPS).The results presented that the C/C-H contaminations were removed from the 4H-SiC surfaces and the surface oxides reduced obviously. |
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| Keywords: | SiC hydrogen plasma ECR plasma RHEED XPS |
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