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表面共振圆环结构对Si纳米线热传导的调控
引用本文:孙博,熊世云,张定波,曹增强,陈元正,王辉,王红艳,倪宇翔.表面共振圆环结构对Si纳米线热传导的调控[J].原子与分子物理学报,2022,39(5):052003-89.
作者姓名:孙博  熊世云  张定波  曹增强  陈元正  王辉  王红艳  倪宇翔
作者单位:西南交通大学物理科学与技术学院,苏州大学功能纳米与软物质实验室,西南交通大学物理科学与技术学院,西南交通大学物理科学与技术学院,西南交通大学物理科学与技术学院,西南交通大学物理科学与技术学院,西南交通大学物理科学与技术学院,西南交通大学物理科学与技术学院
摘    要:利用声子的波动性,在纳米线表面引入共振结构,可以有效阻碍声子输运.为进一步优化共振结构,本文基于平衡态分子动力学(EMD)方法,研究表面共振圆环结构的高度和宽度对Si纳米线热输运性质的影响.结果表明:随着共振圆环高度的增加,Si纳米线的热导率逐渐减小,最大减幅可达61.9%.当高度达到2nm以后,热导率基本不再变化.共振圆环宽度则对热导率的影响较小.声子色散关系中出现的平带,证实了共振圆环引起的声子共振效应;最低共振频率的变化说明了共振圆环中的声子波长决定了共振圆环高度对纳米线热导率的最大影响程度.研究进一步发现,随着共振圆环高度的增加,声学支声子对热导率贡献的比重变小.本文研究结果对高效热电材料和隔热材料的微纳结构设计提供了一种新的思路.

关 键 词:Si纳米线  热输运  分子动力学  声子共振效应
收稿时间:2021/4/3 0:00:00
修稿时间:2021/4/13 0:00:00

Regulation of thermal transport of Si nanowires by surface annulus phonon resonators
Sun Bo,Xiong Shi-Yun,Zhang Ding-Bo,Cao Zeng-Qiang,Chen Yuan-Zheng,Wang Hui,Wang Hong-Yan and Ni Yu-Xiang.Regulation of thermal transport of Si nanowires by surface annulus phonon resonators[J].Journal of Atomic and Molecular Physics,2022,39(5):052003-89.
Authors:Sun Bo  Xiong Shi-Yun  Zhang Ding-Bo  Cao Zeng-Qiang  Chen Yuan-Zheng  Wang Hui  Wang Hong-Yan and Ni Yu-Xiang
Affiliation:Southwest Jiaotong University, School of Physical Science,Soochow University, Functional Nano and Soft Materials Laboratory (FUNSOM),Southwest Jiaotong University, School of Physical Science,Southwest Jiaotong University, School of Physical Science,Southwest Jiaotong University, School of Physical Science,Southwest Jiaotong University, School of Physical Science,Southwest Jiaotong University, School of Physical Science,Southwest Jiaotong University, School of Physical Science
Abstract:By using the wave nature of phonons, the resonance structure can be introduced on the surface of nanowires, which can effectively hinder the phonon propagation. In order to further optimize the resonant structure, based on the equilibrium molecular dynamics (EMD) method, this paper studies the influence of the height and width of the surface resonant annulus structure on the thermal transport of Si nanowires. The results show that with the increase of resonance annulus height, the thermal conductivity of Si nanowires decreases gradually until the height reaches 2nm, and the maximum reduction can reach 61.9%. The resonant annulus width has less effect on the thermal conductivity. The flat band in the acoustic branches in the dispersion relation confirms the phonon resonance effect caused by the resonance annulus, and the change of the minimum resonance frequency indicates that the phonon wavelength in the resonance annulus determines the maximum influence of the resonance annulus height on the nanowire thermal conductivity. We further found that with the increase of the resonance annulus height, acoustic phonons contribute less to the thermal conductivity. These results provide useful information for the structure design of high-efficiency thermoelectrics and thermal insulation materials.
Keywords:Silicon nanowires  Thermal transport  Molecular dynamics  Phonon resonance effect
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