双栅器件的跨导和漏导

本文将双栅MOSFET考虑成四极器件,以电流连续、电压守恒为基础,讨论了其跨导和漏导特性。所提出的分析求解方法。可推广到任何双栅结构器件。结果表明,此方法不仅简洁、适用性广;而且物理概念清楚,将三极器件和四极器件的特性联系了起来,自然地引出了双栅器件特有的耦合概念。对于所选取的单栅模型,跨导、漏导的计算值和实验值符合良好。

TRANSCONDUCTANCE AND DRAIN CONDUCTANCE OF DUAL-GATE FETs

The transconductances (gmts,gm2S) and drain conductance (gds) of dual-gate FETs are evaluated by takinj; a dual-gate PET as a four-polar device based on current continuity and voltage conservation. This analytic method may be suitable for any kind of dual-gate FETs. The expressions of gmis, gm2s, gas are quite clear in conception. The formulas set up the relations between single-gate FETs and dual-gate FETs, and lead to a special coupling idea of dual-gate devices. For the single-gate FET's model selected, there is a good agreement between calculated and experimental values of gmts,gm2s and gds.