| 快速热氮化改善n-MOSFET栅氧化层的加速击穿 |
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| 引用本文： | 黄美浅,李观启,刘百勇. 快速热氮化改善n-MOSFET栅氧化层的加速击穿[J]. 华南理工大学学报(自然科学版), 1995, 0(12) |
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| 作者姓名： | 黄美浅 李观启 刘百勇 |
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| 作者单位： | 华南理工大学应用物理系 |
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| 摘 要： | 研究不同类型、不同沟道长度的ｎ沟金属－氧化物－半导体场效应晶体管（ＭＯＳＦＥＴ）在不同栅电压下工作时栅氧化层的击穿特性。结果表明，ＭＯＳＦＥＴ栅氧化层的加速击穿起因于沟道大电流，而栅氧化层进行快速热氮化可极大地改善其栅氧化层的击穿特性。
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| 关 键 词： | 击穿电压；氧化物；氮化；界面态 |
IMPROVEMENT OF GATE-OXIDE BREAKDOWN IN N-MOSFET''''S USING RAPID THERMAL NITRIDATION |
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| Huang Meiqian, Li Guanqi, Liu Baiyong. IMPROVEMENT OF GATE-OXIDE BREAKDOWN IN N-MOSFET''''S USING RAPID THERMAL NITRIDATION[J]. Journal of South China University of Technology(Natural Science Edition), 1995, 0(12) |
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| Authors: | Huang Meiqian Li Guanqi Liu Baiyong |
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| Abstract: | This work extensively examines gate-oxide breakdown behaviors of n-MOSFET's including both enhancement-type and depletion-type devices with various channel lengths under different operating conditions. The results indicate that the accelerated gateoxide breakdown in MOSFET's is initiated by large channel current. The situation can be greatly improved by rapid thermal nitridation of the gate oxide in the transistors. |
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| Keywords: | breakdown voltage oxide nitridation interface state |
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