Photoluminescence study of single-side doped n-AlGaAs/GaAs structures with quantum wells

Photoluminescence spectra of single-side doped n-AlGaAs/GaAs structures have been studied at different quantum well widths and temperatures. The sharp growth of the photoluminescence intensity due to the resonant capture of photoexcited holes by a quantum well has been observed for the first time in such structures. A theoretical model for calculating the quantum states in single-side doped structures is proposed. The self-consistent solution of the system of Schrödinger and Poisson equations is obtained by the perturbation method.