GaAs材料解理加工分子动力学分析及工艺实验

针对Ga As基半导体激光芯片谐振腔面的超精密解理制造技术需求，开展GaAs材料解理加工分子动力学仿真及加工工艺实验研究。首先建立Ga As材料划片过程的分子动力学模型，研究[100]和[110]晶向的表面微观形貌及亚表面损伤深度，分析材料各向异性对划片形貌的影响机制；然后开展解理工艺实验对MD模型进行了验证，并分析解理面形貌的变化情况。仿真结果表明：相比于[100]晶向，[110]晶向上最大损伤宽度、划片宽度和亚表面损伤深度平均值分别降低5.23%、3.98%和2.61%，沿该晶向所得划片质量更优，此外最大损伤宽度、划片宽度和亚表面损伤深度均随划片深度增加而增加，而划片速度对Ga As表面形貌及亚表面损伤影响较小；通过工艺实验验证了MD仿真结果，并确认[110]为Ga As最佳解理加工晶向。

Molecular Dynamics Simulation and Experimental Investigation of Mechanical Cleavage of GaAs

To meet the demand for ultra-precision manufacturing of the cleavage cavity surface of GaAs based semiconductor lasers, the molecular dynamics simulation and experimental investigation of mechanical cleavage of GaAs are carried out. First, molecular dynamics simulations of scratching on GaAs are conducted to investigate the influence of crystal anisotropy on the surface and subsurface deformation mechanism. Then, a series of verification experiments are carried out. The cleavage plane morphologies are also analyzed. Compared with the [100] direction, the maximum damage width, scratching width and subsurface depth of [110] direction is decreased 5.23 %, 3.98 %, 2.61 % respectively. as the scratching depth increased. A better scratching quality of the GaAs surface can be obtained in the scratches along the [110] direction. In addition, the maximum damage width, scratching width and subsurface depth is increased as the scratching depth increased. The surface and subsurface morphology of GaAs is not significantly affected by scratching speed. The experimental results are in good agreement with the simulation results. For GaAs, the [110] direction is the best cleavage direction.