| 发射层对指数掺杂Ga1-χAlχ As/GaAs光阴极性能的影响 |
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| 引用本文： | 赵静,常本康,熊雅娟,张益军,张俊举.发射层对指数掺杂Ga1-χAlχ As/GaAs光阴极性能的影响[J].电子器件,2011(2):119-124. |
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| 作者姓名： | 赵静 常本康 熊雅娟 张益军 张俊举 |
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| 作者单位： | 南京理工大学电子工程与光电技术学院 |
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| 基金项目： | 国家自然科学基金项目(60678043);南京理工大学自主科研专项计划课题资助项目(2010ZYTS032) |
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| 摘 要： | 为了探索发射层厚度对指数掺杂Ga1-χAlχAs/GaAs光电阴极光学性能与光电发射性能的影响,实验制备了两种发射层厚度不同的阴极样品,并测试得到400μm～1 000 nm内反射率、透射率与光谱响应曲线.实验结果说明发射层2.0 μm厚的样品比1.6μm厚的样品性能更好.利用薄膜光学矩阵理论公式计算阴极膜系反射率、透...
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| 关 键 词： | 光学薄膜 Ga1-χAlχAs/GaAs 光电阴极 光学性能 光电发射性能 光谱曲线 |
Influence of the Active Layer on Exponential-Doping Ga1-xAlxAs/GaAs Photocathode Performances |
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| ZHAO Jing,CHANG Benkang,XIONG Yajuan,ZHANG Yijun,ZHANG Junju.Influence of the Active Layer on Exponential-Doping Ga1-xAlxAs/GaAs Photocathode Performances[J].Journal of Electron Devices,2011(2):119-124. |
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| Authors: | ZHAO Jing CHANG Benkang XIONG Yajuan ZHANG Yijun ZHANG Junju |
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| Affiliation: | (Institute of Electronic Engineering and Optoelectronic Technology,Nanjing University of Science and Technology,Nanjing 210094,China) |
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| Abstract: | For research on the influence of the active layer on optical and photoelectric performances of exponential-doping Ga1-xAlxAs/GaAs photocathode,we prepared two samples with different thicknesses of 1.6 μm and 2.0 μm for the active layer.The reflectance,transmittance and spectral response curves were measured ranging from 400 nm to 1000 nm.The experimental result showed that the thicker sample possesed better performance than the other one.Theoretical reflectance,transmittance and absorptivity are derived as functions of the thickness from matrix theory in thin film optics.And the original quantum efficiency formula is modified by reflectance spectrum and shortwave limit.Based on the modification,absorptivity and spectral response are simulated with various thicknesses.It illuminates that the influence of the active layer is inconsistent on both the performances.Additionally,the scope of the optimal thickness is calculated as 1.8 μm～2.4 μm in the case of exponential-doping Ga1-xAlxAs/GaAs photocathode. |
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| Keywords: | Optical thin film Ga1-xAlxAs/GaAs photocathode optical performance photoelectric performance spectrum |
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