CuI晶体缺陷态电子结构及其施主-受主对发光机理的研究

运用相对论密度泛函理论和嵌入分子团簇方法，模拟计算了具有γ相CuI晶体的本征缺陷态电子结构.结果表明，四面体间隙Cu和Cu空位最有可能在禁带中引入浅施主和受主能级，从而形成施主-受主对(DAP)，产生420—430 nm的DAP复合发光. 关键词： γ-CuI晶体 密度泛函理论 电子结构 发光机理

Electronic structure of intrinsic defects and mechanism of donor-acceptor pair luminescence in CuI crystal

The electronic structures of γ phase copper iodide crystal and the intrinsic point defects associated with iodine and copper have been studied with relativistic density functional theory and embedded cluster method. The simulations for point defects show that the tetrahedron interstitial copper atoms and copper vacancies may lead to the shallow donor and acceptor levels in the energy gap, which is related with the origins of the broad donor-acceptor pair recombination luminescence band 420—430 nm of CuI crystal.