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秧苗状Zn2SnO4纳米线的制备及光致发光性能研究
引用本文:刘中奎.秧苗状Zn2SnO4纳米线的制备及光致发光性能研究[J].光散射学报,2011,23(3):234-237.
作者姓名:刘中奎
作者单位:临沂大学分析测试实验中心,临沂,276000
基金项目:山东省自然科学基金(2005ZRB01602)
摘    要:本文通过化学气相沉积方法成功制备了秧苗状Zn2SnO4纳米线,X射线衍射表明,样品为面心立方结构的Zn2SnO4,同时含有少量的ZnO物相,并且可以通过延长沉积时间的方法获得较为纯净的Zn2SnO4材料.SEM结果显示样品形貌为秧苗状的纳米线.通过样品的光致发光谱的研究发现,Zn2SnO4 的紫外发光强度随着ZnO杂相...

关 键 词:Zn2SnO4  光致发光  拉曼光谱  CVD
收稿时间:2011/4/26

Synthesis and Photoluminescence of Seedling-Like Zn_2SnO_4 Nanowires
LIU Zhong-kui.Synthesis and Photoluminescence of Seedling-Like Zn_2SnO_4 Nanowires[J].Chinese Journal of Light Scattering,2011,23(3):234-237.
Authors:LIU Zhong-kui
Affiliation:LIU Zhong-kui(Experimental Center,Linyi University,Linyi 276000,China)
Abstract:Seedling-like Zn2SnO4 nanowires are synthesized by chemical vapor deposition method.The structure and morphology of the as-grown products are characterized by X-ray diffraction(XRD),Raman spectroscopy,and scanning electron microscopy(SEM).Results show that all the samples are face-centered cube(fcc) phase.A small quantity of ZnO is also found in the sample.The purity of Zn2SnO4 can be increased by prolonging the deposition time.Room temperature photoluminescence(PL) spectrum shows that luminescent intensity...
Keywords:Zn2SnO4  photoluminescence  Raman  CVD  
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