| 用RF磁控溅射法制备锂氮共掺p型氧化锌 |
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| 引用本文： | 刘力,郭秀芝,赵婷婷.用RF磁控溅射法制备锂氮共掺p型氧化锌[J].吉林大学学报(理学版),2010,48(4):667-671. |
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| 作者姓名： | 刘力 郭秀芝 赵婷婷 |
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| 作者单位： | 1. 北华大学 物理学院, 吉林 吉林132013,2. 吉林大学 物理学院, 长春 130012 |
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| 摘 要： | 采用RF磁控溅射技术,以掺杂氮化锂的氧化锌陶瓷为靶材,用不同物质的量比的高纯氩气和氧气混合气体为溅射气体,在石英衬底上生长锂氮共掺氧化锌薄膜,并在600℃真空热退火30min,研究生长气氛对锂氮共掺氧化锌导电类型、晶体结构与低温光致发光的影响规律和机制.结果表明,当以n(氩气):n(氧气)=60的混合气体为溅射气体时,可得到稳定的p型锂氮共掺氧化锌薄膜.X射线衍射谱表明,样品具有高度的c轴择优取向.由变温光致发光分析可知,该薄膜的p型导电来源于LiZn受主缺陷,其光学受主能级位于价带顶131.6meV处.
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| 关 键 词： | RF磁控溅射 锂氮共掺 氧化锌 半导体 |
| 收稿时间： | 2009-10-26 |
p-Type Li-N Dual Doped ZnO Prepared by RF Magnetron Sputtering |
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| LIU Li,GUO Xiu-zhi,ZHAO Ting-ting.p-Type Li-N Dual Doped ZnO Prepared by RF Magnetron Sputtering[J].Journal of Jilin University: Sci Ed,2010,48(4):667-671. |
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| Authors: | LIU Li GUO Xiu-zhi ZHAO Ting-ting |
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| Affiliation: | 1. College of Physics, Beihua University, Jilin 132013, Jilin Province, China;2. College of Physics, Jilin University, Changchun 130012, China |
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| Abstract: | The Li\|N dual doped ZnO (ZnO∶(Li,N)) thin films prepared on quartz substrates by means of RF magnetron sputtering with Li3N as dopant source and Ar/O2 with diffetent molar ratio as sputtering gas. The as\|grown films were annealed in vacuum for 30 min at 600 ℃. The results show when n(Ar)∶n(O2)=60, the stable p\|type ZnO∶(Li,N) thin film was obtained. XRD result shows that the film exhibits high preferential orientation in c\|axis direction. The p\|type conductivity results from the defect of substitutional Zn at O site (LiZn) via the analysis of temperature\|dependent PL, and the optical acceptor level of the LiZn was calculated to be 131.6 meV above the valence band maximum. The effects of the growth ambience on conductivity type, crystal structure and low temperature PL were studied. |
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| Keywords: | RF magnetron sputtering Li-N dual doped zinc oxide semiconductor |
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