发射区硼掺杂浓度对横向PNP晶体管高低剂量率辐射损伤的影响

本文研究了发射区重硼掺杂和轻硼掺杂横向PNP晶体管的高低剂量率辐照损伤特性。实验结果表明，随总剂量的增加，晶体管基极电流增大，电流增益下降，且轻掺杂PNP晶体管的退化更为严重。文中讨论了辐照感生缺陷在发射区重掺杂和轻掺杂晶体管退化中的作用，特别是氧化物正电荷的双重作用。最后，文章详细论述了高低剂量率辐照下，重掺杂PNP晶体管集电极电流IC的辐照响应。

Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

The characteristics of radiation damage under high or low dose rate in lateral PNP transistors with heavily or lightly doped emitter is investigated in this article. Experimental results show that as total dose increases, the base current of transistors would increase and current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects especially the double effects of oxide trapped charge is discussed in heavily or lightly doped transistors. Finally, through comparison between high- and low-dose-rate response of collector current (IC) in heavily doped LPNP transistors, the abnormal effect can be attribute to the annealing of oxide trapped charge. the response of collector current, IC, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail.