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| 10W QCW operation of a proton implanted GaAlAs diode laser array | |
| 作者姓名： | ZHANG Daoyin HU Siqiang MHO Qingfeng |
| 作者单位： | ZHANG Daoyin:Chongqing Optoelectronics Research Institute, Yongchuan 632163, CHN HU Siqiang:Chongqing Optoelectronics Research Institute, Yongchuan 632163, CHN MHO Qingfeng:Chongqing Optoelectronics Research Institute, Yongchuan 632163, CHN |
| 摘 要： | |
| 关 键 词： | 激光二极管 半导体激光器 量子阱 离子注入 光刻 |
| 收稿时间： | 1995/3/23 |
10 W QCW operation of a proton implanted GaAlAs diode laser array |
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| ZHANG Daoyin,HU Siqiang,MHO Qingfeng.10W QCW operation of a proton implanted GaAlAs diode laser array[J].Semiconductor Photonics and Technology,1995,1(1):52-56. | |
| Abstract: | We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted multiple stripe conventional single quantum well separate confinement heterostructure(SQW-SCH) GaAlAs diode laser array has been realized.These devices exhibit the lateral far-field radiation pattern of a phase-locked array of gain-guided semiconductor injection laser array. The twenty stripe laser array has a lateral far-field beam divergence full width at half maximum (FWHM) of less than 3°, and three twenty stripe laser array has a beam divergence in the plane of the junction of about 9°. |
| Keywords: | Laser Diodes Semiconductor Laser Array Photoresists Masks Ion Implantation Quantum Well |
