高温工作InAlSb的MBE生长及器件性能研究

接近室温的更高工作温度是第三代红外探测器发展的重要方向。本文论述了用MBE在InSb(100)衬底上外延生长制备P-i-N型三元In_1-xAl_xSb薄膜合金材料,并通过制备单元器件进行了验证。采用RHEED振荡和X射线双晶衍射对In_1-xAl_xSb薄膜的Al组分进行了调控和检测。5.3μm厚薄膜的FWHM≈50 arcsec,Al组分约1.9%。10μm×10μm原子力表面粗糙度RMS≈0.6 nm。制备的单元器件获得了预期的理想效果,为下一步面阵焦平面的制备奠定了基础。

MBE growth and device performance of high operating temperature InAlSb

Higher operating temperature close to room temperature is an important direction for the development of third-generation infrared detectors.In this paper,the P-i-N ternary In1-xAlxSb thin film alloy material was epitaxially grown on InSb(100) substrate by MBE and verified bypreparedunit devices.The Al composition of the In1-xAlxSb film was conditioned and detected by RHEED oscillation and X-ray double crystal diffraction.5.3 μm thick thin film FWHM isabout 50 arcsec,Al componentsis about 1.9%.10 μm×10 μm atomic force surface roughness RMS is about 0.6 nm.The prepared unit device obtained the expected ideal effect and laid the foundation for the preparation of the next areafocal plane.