首页 | 官方网站   微博 | 高级检索  
     

快速热处理工艺下直拉单晶硅中铜、镍对氧沉淀的影响
引用本文:吴冬冬,杨德仁,席珍强,阙端麟. 快速热处理工艺下直拉单晶硅中铜、镍对氧沉淀的影响[J]. 半导体学报, 2006, 27(3): 413-418
作者姓名:吴冬冬  杨德仁  席珍强  阙端麟
作者单位:浙江大学硅材料国家重点实验室,杭州,310027
基金项目:广东省博士启动基金,浙江省自然科学基金,中国科学院资助项目
摘    要:研究了快速热处理工艺下直拉单晶硅中过渡族金属铜、镍对内吸杂工艺中氧沉淀形成规律的影响.实验结果表明:在快速热处理工艺下,间隙铜对氧沉淀几乎没有影响,铜沉淀却能显著地促进氧沉淀的形成;而间隙镍或镍沉淀对氧沉淀的形成都没有影响.基于实验结果并结合氧沉淀的形核理论,对金属铜、镍对氧沉淀的影响机理进行了解释.

关 键 词:单晶硅  氧沉淀  Cu  Ni
收稿时间:2015-08-20

Impact of Transition-Metal Contamination on Oxygen Precipitation in Czochralski Silicon Under Rapid Thermal Processing
Wu Dongdong, Yang Deren, Xi Zhenqiang, Que Duanlin. Impact of Transition-Metal Contamination on Oxygen Precipitation in Czochralski Silicon Under Rapid Thermal Processing[J]. Journal of Semiconductors, 2006, In Press. Wu D D, Yang D R, Xi Z Q, Que D L. Impact of Transition-Metal Contamination on Oxygen Precipitation in Czochralski Silicon Under Rapid Thermal Processing[J]. Chin. J. Semicond., 2006, 27(3): 413.Export: BibTex EndNote
Authors:Wu Dongdong  Yang Deren  Xi Zhenqiang  Que Duanlin
Affiliation:State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China;State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310028,China;State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310029,China;State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310030,China
Abstract:The effects of the transition metals copper and nickel on oxygen precipitation in Czochralski silicon under a rapid thermal process are investigated. It is found that interstitial copper has almost no effect on oxygen precipitation, but copper precipitation markedly enhances oxygen precipitation. However, neither interstitial nickel nor nickel precipitation affects oxygen precipitation. The reasons for the effects of copper and nickel contamination on oxygen precipitation are discussed in light of oxygen precipitation nucleation theory.
Keywords:Si  oxygen precipitation  Cu  Ni
本文献已被 万方数据 等数据库收录!
点击此处可从《半导体学报》浏览原始摘要信息
点击此处可从《半导体学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号