| HFCVD法制备纳米晶体碳化硅薄膜中氢流量对晶粒尺寸的影响 |
| |
| 引用本文： | 赵武,张志勇,翟春雪,闫军锋,邓周虎.HFCVD法制备纳米晶体碳化硅薄膜中氢流量对晶粒尺寸的影响[J].光子学报,2009,38(4). |
| |
| 作者姓名： | 赵武 张志勇 翟春雪 闫军锋 邓周虎 |
| |
| 作者单位： | 1. 中国科学院西安光学精密机械研究所,西安,710119;西北大学,信息科学与技术学院,西安,710069
2. 西北大学,信息科学与技术学院,西安,710069 |
| |
| 基金项目： | 陕西省自然科学基金，陕西省教育厅专项基金，西北大学研究生创新基金 |
| |
| 摘 要： | 以甲烷、硅烷和氢气为反应气体,采用热丝化学气相沉积(HFCVD)法在单晶硅衬底上沉积纳米晶体碳化硅(SiC)薄膜.通过X射线衍射(XRD)和扫描电子显微镜(SEM)分别对SiC薄膜的晶体结构和表面形貌进行分析.实验发现氢气流量对碳化硅薄膜晶粒尺寸有很大影响,当氢气流量从10SCCM变化到300SCCM时,薄膜晶粒的平均尺寸将由较大的400 nm左右减小到40 nm左右.
|
| 关 键 词： | 纳米晶体 SiC薄膜 氢气流量 |
Influence of Hydrogen Flow on Grain Size of Nano-Crystalline Sic Films Grown by HFCVD Method |
| |
| ZHAO Wu,ZHANG Zhi-yong,ZHAI Chun-xue,YAN Jun-feng,DENG Zhou-hu.Influence of Hydrogen Flow on Grain Size of Nano-Crystalline Sic Films Grown by HFCVD Method[J].Acta Photonica Sinica,2009,38(4). |
| |
| Authors: | ZHAO Wu ZHANG Zhi-yong ZHAI Chun-xue YAN Jun-feng DENG Zhou-hu |
| |
| Affiliation: | 1 Xi'an Institute of Optics and Precision Mechanics;Chinese Academy of Sciences;Xi'an 710068;China;2 School of Information Science and Technology;Northwest University;Xi'an 710069;China |
| |
| Abstract: | Nano-crystalline silicon carbide(SiC)thin films were deposited on monocrystalline silicon polished wafer substrate by hot filament chemical vapor deposition(HFCVD)technique with CH4,SiH4 and H2 as reaction gases.X-Ray Diffraction(XRD)and Scanning Electron Microscopy(SEM)were performed to study structure properties and surface micrography of the thin films,respectively.The results indicate that the hydrogen flow rate has a significant effect on grain size of the nano-crystalline SiC films.The grain size of S... |
| |
| Keywords: | HFCVD |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
