Structural and optical characteristics of Al x Ga1- x N/AlN superlattice |
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Authors: | ZiLi Xie Rong Zhang RuoLian Jiang Bin Liu HaiMei Gong XiangQian Xiu Peng Chen Hai Lu Ping Han Yi Shi YouDou Zheng |
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Affiliation: | (1) Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Physical Department of Nanjing University, Nanjing, 210093, China;(2) Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai, 200083, China |
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Abstract: | AlN/Al0.3Ga0.7N superlattices were grown on (0001) sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The superlattice period varies from 6 to 30. The layer thickness of different period stack was designed. GaN or AlGaN template was employed for growing AlN/AlGaN superlattices. Reflectivity, SEM, AFM and XRD data of the Al x Ga1-x N/AlN superlattices are presented. It is found that the templates used have an intensive impact on surface roughness and interfacial properties of following AlN/AlGaN superlattices. The result of atomic force microscopy indicates that AlN/AlGaN superlattices grown on GaN template exhibit quasi-two-dimensional growth mode. The resulting superlattice has a smooth surface morphology and distinct interface. No crack is observed in the area of a 2-inch wafer. Supported by the Special Funds for Major State Basic Research Project (973 Project) (Grant No. 2006CB6049), the Hi-tech Research Project (Grant Nos. 2006AA03A103, 2006AA03A118, and 2006AA03A142), the National Natural Science Foundation of China (Grant No. 60676057), and the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050284004) |
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Keywords: | MOCVD superlattices Al x Ga1-x N/AlN |
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