AlN陶瓷衬底的SIMS和XRD测量

AlN陶瓷中成分与杂质对于AlN的性能具有决定性作用。用二次离子质谱（SIMS）和X射线衍射（XRD）对清华大学材料系电子封装用的AlN陶瓷进行了研究。SIMS谱表明AlN衬底中除Al,N以外还有C，O，Si，Ca，Y等元素，其中有些是表面污染。衬底的SIMS深度分析表明样品O，Ca，Y信号都很强，且分布均匀，说明样品中含有Y2O3，CaO添加剂。AlN样品的XRD谱与AlN的JCPDS卡片对照，在测量范围内卡片上所有峰均出现，且晶面间距符合很好。在XRD谱上找到了与Y2O3和CaO对应的衍射峰。

SIMS AND XRD ANALYSES OF AlN CERAMIC SUBSTRATE

The components and impurities in AlN ceramics have a determinant effect on the property of AlN. In this article, the electronic packaging ceramic AlN samples from Department of Materials,Tsinghua university,have been studied using secondary ion mass spectrometry (SIMS) and X-ray diffraction (XRD).SIMS spectrum shows: besides Al and N, there'are other elements such as C, O, Si, Ca and Y in the AlN substrate, sorne of them are from surface contamination,SIMS depth profiling on AlN substrate shows strong O,Ca and Y signals inside the sample, and the distributions are uniform,indicating Y2O3 and CaO ingredient in the sample as sintering aids. While AlN's XRD spectum compares with the JCPDS cards, within the measurement range,all of the peaks in the card appear in the spectrum,and the d-spacings agree very well. The diffraction peaks corresponding to Y2O3 and CaO have been found in the spectrum.