| 掺碳氧化铟薄膜的铁磁性研究 |
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| 引用本文： | 阮凯斌,刘银春,吴义炳,吕灵燕.掺碳氧化铟薄膜的铁磁性研究[J].电子元件与材料,2012,31(2):33-35,39. |
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| 作者姓名： | 阮凯斌 刘银春 吴义炳 吕灵燕 |
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| 作者单位： | 1. 福建农林大学机电工程学院,福建福州350002;福建农林大学金山学院,福建福州350002
2. 福建农林大学机电工程学院,福建福州,350002 |
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| 基金项目： | 福建省自然科学基金资助项目，福建农林大学青年教师科研基金资助项目 |
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| 摘 要： | 采用磁控溅射法在Si(100)衬底上制备了掺碳氧化铟(In2O3:C)薄膜,溅射过程分别在衬底温度为室温和550℃的条件下进行。通过测试所制In2O3:C薄膜的XRD谱和磁化曲线,研究了In2O3:C薄膜的结构和铁磁性能,并探讨了其铁磁性的起源。结果显示,随着含碳量的增加,In2O3:C薄膜的饱和磁化强度先增大后减小;此外,氧空位缺陷浓度高的样品其铁磁性也更强,这表明氧空位缺陷与In2O3:C薄膜的铁磁性起源有直接的关系。
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| 关 键 词： | 稀磁半导体 掺碳氧化铟 铁磁性 薄膜 |
Study of ferromagnetism in carbon-doped In2O3 thin films |
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| RUAN Kaibin
,
LIU Yinchun
,
WU Yibing
,
L Lingyan.Study of ferromagnetism in carbon-doped In2O3 thin films[J].Electronic Components & Materials,2012,31(2):33-35,39. |
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| Authors: | RUAN Kaibin LIU Yinchun WU Yibing L Lingyan |
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| Affiliation: | RUAN Kaibin
,
LIU Yinchun
,
WU Yibing
,
L(U) Lingyan |
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| Abstract: | Carbon-doped In2O3(In2O3:C) thin films were prepared on Si(100) substrates by magnetron sputtering technique.The deposition progresses were carried out at substrate temperatures of room temperature and 550 ℃,respectively.The structure and ferromagnetic properties of prepared In2O3:C thin films were characterized by XRD and magnetization curves,and the origin of ferromagnetism of In2O3:C thin films was discussed accordingly.The results show that,with the increasing of carbon concentration,the saturation magnetization of In2O3:C thin films increases first,and then decreases;in addition,the ferromagnetic signals are found stronger in those samples with higher concentration of oxygen vacancy,which suggests that the origin of ferromagnetism is directly related to the oxygen vacancies in In2O3:C thin films. |
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| Keywords: | diluted magnetic semiconductors carbon-doped In2O3 ferromagnetism thin film |
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