| IGCT 综合型电荷控制 模型的建立和仿真 |
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| 引用本文： | 张华曹,段飞. IGCT 综合型电荷控制 模型的建立和仿真[J]. 电子器件, 2003, 26(1): 25-28 |
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| 作者姓名： | 张华曹 段飞 |
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| 作者单位： | 西安理工大学电子工程系,西安,710048 |
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| 摘 要： | 以电荷控制方程而建立的IGCT综合型电荷控制模型，经关键性的关断电流和关断电压进行了仿真分析，所得结果与实际结果吻合。因此该模型是有效的，可用于IGCT的开关特性分析和集成门极电路设计。
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| 关 键 词： | IGCT 电荷控制 关断分析 |
| 文章编号： | 1005-9490(2003)01-0025-04 |
| 修稿时间： | 2002-09-05 |
The Comprehensive Charge Control ModelingWith Integrated Gate Commutated Thyristor |
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| ZHANGHuacao ?? ?? DUAN Fei. The Comprehensive Charge Control ModelingWith Integrated Gate Commutated Thyristor[J]. Journal of Electron Devices, 2003, 26(1): 25-28 |
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| Authors: | ZHANGHuacao ?? ?? DUAN Fei |
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| Affiliation: | Xi?? an University of Tech |
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| Abstract: | Integrated Gate Commutated Thyristor(IGCT)super charge control model is developed by applying the general charge control equation to the device. The turn off currents are simulated and as a result, their waveforms tally with the measuring waveforms with given parameters. Therefore the super charge control model is suitable for IGCT switching behavior analysis and IGCT gate circuit design. |
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| Keywords: | IGCT charge control turn off analysis |
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