| 反射式NEA GaN光电阴极量子效率恢复研究 |
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| 引用本文： | 乔建良,常本康,钱芸生,杜晓晴,王晓晖,郭向阳.反射式NEA GaN光电阴极量子效率恢复研究[J].物理学报,2011,60(1):17903-017903. |
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| 作者姓名： | 乔建良 常本康 钱芸生 杜晓晴 王晓晖 郭向阳 |
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| 作者单位： | (1)南京理工大学电子工程与光电技术学院,南京 210094; (2)南京理工大学电子工程与光电技术学院,南京 210094;南阳理工学院电子与电气工程系,南阳 473004; (3)重庆大学光电工程学院,重庆 400030 |
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| 基金项目： | 国家自然科学基金 (批准号: 60871012,60701013)和河南省教育厅自然科学研究计划项目(批准号: 2010C510009)资助的课题. |
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| 摘 要： | 以反射式NEA GaN光电阴极充分激活、衰减以及补Cs后的量子效率曲线为依据,针对阴极量子效率的衰减规律和补Cs后的恢复状况,论述了NEA GaN光电阴极量子效率的衰减和恢复机理.经过重新Cs化处理,反射式NEA GaN光电阴极量子效率在240 nm到300 nm的短波区域恢复到激活后最好状态的94%以上,300 nm到375 nm的长波区域恢复到88%以上.结合反射式NEA GaN光电阴极衰减前后的表面势垒形状和反射式GaN光电阴极量子效率的计算公式,得到了量子效率曲线的衰减规律以及补Cs后的恢复状况与
关键词：
反射式
NEA
GaN光电阴极
量子效率
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| 关 键 词： | 反射式 NEA GaN光电阴极 量子效率 |
| 收稿时间： | 2010-04-24 |
Quantum efficiency recovery of reflection-mode NEA GaN photocathode |
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| Qiao Jian-Liang,Chang Ben-Kang,Qian Yun-Sheng,Du Xiao-Qing,Wang Xiao-Hui,Guo Xiang-Yang.Quantum efficiency recovery of reflection-mode NEA GaN photocathode[J].Acta Physica Sinica,2011,60(1):17903-017903. |
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| Authors: | Qiao Jian-Liang Chang Ben-Kang Qian Yun-Sheng Du Xiao-Qing Wang Xiao-Hui Guo Xiang-Yang |
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| Affiliation: | School of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;Department of electronic & electric Engineering, Nanyang Institute of Technology, Nanyang 473004, China;School of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;School of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;College of Optoelectronic Engineering, Chongqing University, Chongqing 400030, China;School of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;School of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China |
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| Abstract: | In order to investigate the decay tendency and the recovery status of the quantum efficiency of reflection-mode NEA GaN photocathode, the quantum efficiency curves have been studied after the photocathode was fully activated, stored in system and supplemented with Cs. The quantum efficiency decay and recovery processes of reflection-mode NEA GaN photocathode were observed and the mechanism was discussed. The quantum efficiency value of reflection-mode NEA GaN photocathode can be recovered up to more than 94% of the best value in the shortwave region between 240nm and 300nm, and more than 88% in the long wave region between 300nm and 375nm after Cs supplement. Based on the changes of surface potential barrier profiles of the reflection-mode NEA GaN photocathode before and after the quantum efficiency degradation and the quantum yield formula, the decay characteristic and the recovery status of quantum efficiency curve after supplement with Cs have been related to the changes of surface barrier shapes. |
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| Keywords: | reflection-mode NEA GaN photocathode quantum efficiency |
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