Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors |
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| Authors: | N. A. Maleev V. A. Belyakov A. P. Vasil’ev M. A. Bobrov S. A. Blokhin M. M. Kulagina A. G. Kuzmenkov V. N. Nevedomskii Yu. A. Guseva S. N. Maleev I. V. Ladenkov E. L. Fefelova A. G. Fefelov V. M. Ustinov |
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| Affiliation: | 1.Ioffe Institute,St. Petersburg,Russia;2.JSC “Salyut”,Nizhny Novgorod,Russia;3.Submicron Heterostructures for Microelectronics Research and Engineering Center,Russian Academy of Sciences,St. Petersburg,Russia;4.Peter the Great Saint-Petersburg Polytechnic University,St. Petersburg,Russia |
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| Abstract: | The molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors is studied and optimized. The choice of the substrate-holder temperature, growth rate and III/V ratio in the synthesis of individual heterostructure regions, the thickness of AlAs inserts and barrier-layer quality are critical parameters to achieve the optimal characteristics of heterobarrier varactors. The proposed triple-barrier structures of heterobarrier varactors with thin InGaAs strained layers immediately adjacent to an InAlAs/AlAs/InAlAs heterobarrier, mismatched with respect to the InP lattice constant at an AlAs insert thickness of 2.5 nm, provides a leakage current density at the level of the best values for heterobarrier varactor structures with 12 barriers and an insert thickness of 3 nm. |
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