Uncooled C-band wide-band gain lasers with 32-channel coverage and -20-dBm ASE injection for WDM-PON |
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| Authors: | E.H. Lee Y.C. Bang J.K. Kang Y.C. Keh D.J. Shin J.S. Lee S.S. Park I. Kim J.K. Lee Y.K. Oh D.H. Jang |
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| Affiliation: | Telecommun. R&D Center, Samsung Electron. Co., Gyeonggi-Do, South Korea; |
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| Abstract: | We report a spectrum-sliced amplified spontaneous emission-injected wide-band gain laser covering a temperature range over 110/spl deg/C as well as entire 32 100-GHz-spaced channels (1533-1558 nm) in 155-Mb/s upstream transmissions over 25 km of single-mode fiber in a wavelength-division-multiplexed passive optical network. The wide-band gain laser diode employs asymmetric multiple quantum-well structure and low antireflection coating in order to widen the gain spectrum. |
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