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Long lifetime photoconductivity in semi-insulating bulk GaAs
Authors:J Jiménez  P Hernández  JA de Saja  J Bonnafé
Affiliation:1. Lab. de Física del Estado Sólido, Facultad de Ciencias, 47011 Valladolid, Spain;2. CEM (Centre d''Electronique de Montpellier), USTL, 34060 Montpellier, France
Abstract:We report a new photomemory effect in semi-insulating bulk GaAs. Persistent illumination with 1.15 eV photons induces a photosensitivity state in GaAs, which is characterized by a slow decay of the photoconductivity, after the light is switched-off. The most relevant phenomenological aspects of this effect are summarized in this communication.
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