Molecular beam epitaxial growth and thermodynamic analysis of InGaAs and InAlAs lattice matched to InP |
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| Authors: | M McElhinney and C R Stanley |
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| Affiliation: | a MBE Research Group, Department of Electronics and Electrical Engineering, University of Glasgow Glasgow G12 8QQ United Kingdom |
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| Abstract: | Reflection high-energy electron diffraction (RHEED) intensity oscillations have been used to detect the onset of metal droplet formation on the surface of InAs, InGaAs and InAlAs during molecular beam epitaxy. The growth conditions which produce such droplets are shown to be in good agreement with predictions based on thermodynamic arguments. |
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