Lasing wavelengths of index-guided AlGaInP semiconductor lasers as functions of off-angle from [100] plane of GaAs substrate

The lasing wavelengths of AlGaInP semiconductor lasers are investigated as functions of the off-angle in the direction of 110] from the 100] plane of the GaAs substrate. The lasing wavelengths decrease to about 650 nm as the off-angle increases to 10-15 degrees . The influence of the off-angle on the laser transverse mode is also discussed.<>