| In_（0．2）Ga_（0．8）As／GaAs应变多量子阱结构的光调制反射和热调制反射谱的研究 |
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| 引用本文： | 陈辰嘉,高蔚,米立志,黄德平,瞿明.In_（0．2）Ga_（0．8）As／GaAs应变多量子阱结构的光调制反射和热调制反射谱的研究[J].红外与毫米波学报,1995,14(4). |
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| 作者姓名： | 陈辰嘉 高蔚 米立志 黄德平 瞿明 |
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| 作者单位： | 北京大学物理系 |
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| 摘 要： | 对Ｉｎ（０．２）Ｇａ（０．８）Ａｓ／ＧａＡｓ应变多量子阱在７７Ｋ下的光调制反射谱（ＰＲ）和热调制反射谱（ＴＲ）进行了实验研究．对ＰＲ结果的线形拟合指认了应变多量子阱中子能级的跃迁，并与理论计算结果作了比较．实验对比确认ＰＲ中１１Ｈ、１３Ｈ等跃迁结构为非耦合态、具有电场调制机构的一阶微商性质．而１１Ｌ、３１Ｈ、２２Ｈ等跃迁结构为阶间耦合态，对这些隧穿耦合的低场调制产生三阶微商特性．
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| 关 键 词： | 应变多量子阱，光调制反射谱，热调制反射谱，耦合态 |
PHOTOREFLECTANCE AND THERMOREFLECTANCE STUDIES OF STRAINED-LAYER In_(0.2)Ga_(0.8)As/GaAs MULTIPLE QUANTUM WELLS STRUCTURE |
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| Chen Chenji,Gao Wei,Mi Lizhi,Hunang Depin,Qu Ming.PHOTOREFLECTANCE AND THERMOREFLECTANCE STUDIES OF STRAINED-LAYER In_(0.2)Ga_(0.8)As/GaAs MULTIPLE QUANTUM WELLS STRUCTURE[J].Journal of Infrared and Millimeter Waves,1995,14(4). |
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| Authors: | Chen Chenji Gao Wei Mi Lizhi Hunang Depin Qu Ming |
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| Abstract: | The studies of experimental results in strained In0.2Ga0.8 As/GaAs multiple quantum wells structure by using photoreflectance(PR)and thermoreflectance(TR)techniques at 77K were presented' With a least square' fit of lineshape function,the intersubband transitions in PR spectra can be clearly identified in the multiple quantum wells and compared with an envolope-function calculation. From a comparison of the PR and TR spectra at 77K of a strained InGaAs/GaAs multiple quantum wells structure,it can be confirmed that the first derivative nature of electric field modulation relates to the uncoupled 11H and 13H transitions,and the low field modulation produces a third-derivative line shape related to the coupled states (the tunneling effect between wells). |
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| Keywords: | strained multiple quantum wells photoreflectance thermoreflectance coupledstates |
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