Structural and optical properties of AlxGa1-xN/AlyGa1-yN multiple quantum wells for deep ultraviolet emission |
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| Authors: | Baozhu WANG Xiaoliang WANG Xiaoyan WANG Junxue RAN Hongling XIAO Cuimei WANG Guoxin HU |
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| Affiliation: | 1. Material Science Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Information Science and Engineering,Hebei University of Science and Technology,Shijiazhuang 050000,China
2. Material Science Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | The AlxGa1-xN/AlyGa1-yN multiple quantum well (MQW) structure for deep ultraviolet emission has been grown on sapphire by metal organic chemical vapor deposition (MOCVD).High resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and cath-odoluminescence (CL) are used to characterize the structural and optical properties of MQWs, respectively.Clear step flows can be observed in the AFM image indicating a two-dimensional growth model.There are many cracks on the surface of the MQW structure because of the high tensile stress.HRXRD shows multiple satellite peaks to the 2rid order.The HRXRD simulation shows that the MQW period is about 11.5 nm.The emission peak of AlxGa1-xN/AlyGa1-yN MQWs is about 295 nm in the deep ultraviolet region from the CL spectra. |
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| Keywords: | nitrides metal organic chemical vapor deposition (MOCVD) multiple quantum well (MQW) deep ultraviolet emission |
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