Crystallization study of chemically vapour-deposited amorphous silicon films by in situ x-ray diffraction |
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Authors: | R. Bisaro N. Proust J. Magariño K. Zellama |
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Affiliation: | Laboratoire Central de Recherches Thomson-CSF, B.P. 10, 91401 Orsay Cédex France;Groupe de Physique des Solides de l''Ecole Normale Supérieure, Université Paris VII, Tour 23, 2 place Jussieu, 75251 Paris Cédex France |
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Abstract: | The solid phase crystallization kinetics of chemically vapour-deposited amorphous silicon films were studied by in situ X-ray diffraction. We determined the crystalline volume directly from the Bragg peak intensities at various times during isothermal annealing in the temperature range 578 °C < T < 658 °C. From these experiments we deduced that the crystallization was due to nucleation predominantly at the substrate-film interface followed by crystal growth perpendicular to this interface. The crystal growth rate was thermally activated with an activation energy Ev of 3.1 eV. A strong 〈111〉 preferred orientation of the growing polycrystal was observed and the grain size remained constant at about 60 nm. Evidence of stresses at the amorphous-crystalline interface during the early stages of crystallization was observed. A comparison with previous conductivity measurements is also carried out. |
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