| GaAs PHEMT开关电路研究 |
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| 引用本文： | 肖湘萍.GaAs PHEMT开关电路研究[J].贵州教育学院学报,2008,19(3):14-16. |
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| 作者姓名： | 肖湘萍 |
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| 作者单位： | 贵州教育学院数计系 贵州贵阳550003 |
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| 摘 要： | 概述了微波毫米波结构高电子迁移率晶体管的结构特性，在相同条件下，PHMET器件的功率特性和线性性能均要好于MESFET器件。利用GaAsPHEMT集成电路的设计和工艺技术，研制开发移动通信用的GaAsMMIC大功率高线性单刀双掷开关集成电路，产品具有承受功率大，线性度高的特点，在1GHz，插损为0．7dB，隔离度大于26dB，在2GHz，插损为0．8dB，隔离度大于22dB，并且具有较高的功率处理能力，其P-0．1≥10W。产品由GaAs圆片标准PHEMT工艺线加工，成本低，并且采用低费塑料封装，产品各项性能指标均达到了国外同类产品水平。
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| 关 键 词： | 砷化镓 宽栅工艺 大功率 开关 |
| 文章编号： | 1002-6983(2008)03-0014-03 |
| 修稿时间： | 2007年7月4日 |
Study on the GaAs PHEMT switch circuit |
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| XIAO Xiang-ping.Study on the GaAs PHEMT switch circuit[J].Journal of Guizhou Educational College(Social Science Edition),2008,19(3):14-16. |
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| Authors: | XIAO Xiang-ping |
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| Affiliation: | XIAO Xiang-ping ( Department of Mathematics, Guizhou Education Institute , Guiyang, Guizhou, 550003 China) |
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| Abstract: | The structure character of microwave and millimeter wave structure high electron mobility transistor are introduced in this paper. GaAs MMIC high power and high linearity SPDT switches for mobile communieation application have been designed based on GaAs Pbemt foundry. This product is described with low insertion loss 0, 7dB@ 1. 0Gttz , 0.8dB@ 2.0GHz , high isolation 26dB@ 1, 0GHz, 22dB@ 1.0GHz and P-0.1≥10W. The type of power switch is packaged with plastic material and it can be used in many communication systems. |
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| Keywords: | GaAs wide gate technology high power switch |
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